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| DMDT9922 PNP DUAL, MATCHED PAIR SURFACE MOUNT TRANSISTOR Features ADVANCE INFORMATION * * * * Epitaxial Planar Die Construction Low Noise High Current Gain Matched Pair of Transistors SOT-363 A C2 B1 E1 Dim A B BC C1 Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 Mechanical Data * * * * * Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K3S Weight: .006 grams (approx.) E2 KXX B2 C D F H J M 0.65 Nominal H K K L M J D F L All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector-Collector Voltage Emitter-Emitter Voltage @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO VCCO VEEO IC Pd RqJA Tj, TSTG DMDT9922 -50 -40 -5.0 -50 -50 -100 200 625 -55 to +125 Unit V V V V V mA mW K/W C Characteristic Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range ED V RO R PP FO AT ON TI UN NO BU RI ST DI DS30142 Rev. 1P-5 1 of 2 DMDT9922 Electrical Characteristics @ TA = 25C unless otherwise specified ADVANCE INFORMATION Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Leakage Current Emitter-Base Leakage Current Collector-Emitter Leakage Current ON CHARACTERISTICS (Note 2) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Impedance Emitter-Base Offset Voltage Change in Emitter-Base Offset Voltage vs. Collector-Base Voltage (CMRR) Change in Emitter-Base Offset Voltage vs. Collector-Current Average Offset Voltage Drift Emitter-Base Offset Current Change in Emitter-Base Offset Current vs. Collector-Base Voltage Average Offset Current Drift Collector-Collector Leakage Current SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Output Conductance Current Gain-Bandwidth Product Notes: Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES hFE VCE(SAT) VCE(SAT) rbe VOS DVOS/ DVCB DVOS/ DIC TC VOS IOS DIOS/ DVCB TC IOS ICC Cobo Cibo hOE fT Min -50 -40 -5.0 3/4 3/4 3/4 300 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ 3/4 3/4 3/4 -0.3 3/4 -4 450 -0.1 -0.1 -0.5 10 10 5 0.5 8 30 50 35 -4 Max 3/4 3/4 3/4 -500 -500 -1000 555 -0.5 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 15 70 3/4 3/4 Unit V V V nA nA nA 3/4 V V W mV mV mV mV/C nA nA pA/C pA pF pF mS MHz Test Condition IC = -50mA, IE = 0 IC = -1.0mA, IB = 0 IE = -50mA, IC = 0 VCB = -30V VEB = -4.0V VCE = -40V IC = -1.0mA, VCE = -6.0V IC = -50mA, IB = -5.0mA IC = -1mA, IB = -0.1mA IC = -10mA to -1mA VCB = 0V, IC = -1mA to -1mA VCB = 0V, IC = -1mA to -1mA VCB = 0V, IC = -10mA to -1mA IC = -10mA to -1mA IC = -10mA, VCB = 0V VCB = 0 to -50V IC = -10mA VCE = -40V VCB = -10V, f = 1.0MHz, IE = 0 VEB = -0.5V, IC = 0, f = 1MHz IC = -1mA, VCE = -5V VCE = -12V, IC = -2.0mA, f = 100MHz 3/4 3/4 3/4 10 170 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width 300ms, duty cycle 2%. ED V RO R PP FO AT ON TI UN NO BU RI ST DI DS30142 Rev. 1P-5 2 of 2 DMDT9922 |
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